K0238 datasheet 2n3904

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NPN switching transistor 2N3904 DATA SHEET STATUS Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. tran 2n3904 npn 60v 200ma gen purp to92 2N3904 Datasheet, 2N3904 PDF, 2N3904 Data sheet, 2N3904 manual, 2N3904 pdf, 2N3904, datenblatt, Electronics 2N3904, alldatasheet, free, datasheet, Datasheets, data ...

2N3904 General Purpose Transistors NPN TO-92 Page 1 31/05/05 V1.0 High Speed Switching Features: • NPN Silicon Planar Switching Transistors. • Fast switching devices exhibiting short turn-off and low saturation voltage characteristics. Free drum sheet music for counting stars

Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.

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2N3904 results. BJT: 2N3904 2N3904-T18 2N3904A 2N3904C 2N3904CSM 2N3904DCSM 2N3904E 2N3904G 2N3904N 2N3904S (Marking ZC ) 2N3904SC (Marking ZCC ) 2N3904U (Marking ZC ) 2N3904V H2N3904 MOSFET: IGBT: SCR: Sonny and cher sheet music2N3904 / MMBT3904 / PZT3904 2N3904 MMBT3904 PZT3904 NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Sourced from Process 23. Absolute Maximum Ratings* TA = 25°C unless otherwise noted 2N3904, 2N3904 Datasheet, 2N3904 NPN General Purpose Transistor Datasheet, buy 2N3904 Transistor 2N3904 ELECTRICAL CHARACTERISTICS Ratings at 25¡C ambient temperature unless otherwise specified SYMBOL MIN. MAX. UNIT Collector-Base Breakdown Voltage at IC = 10 mA, IE = 0 V(BR)CBO 60 — V Collector-Emitter Breakdown Voltage at IC = 1 mA, IB = 0 V(BR)CEO 40 — V Emitter-Base Breakdown Voltage at IE = 10 mA, IC = 0 V(BR)EBO 6— V Collector Saturation Voltage

2N3904 Datasheet (PDF) 1.1. 2n3904g.pdf Size:398K _upd SEMICONDUCTOR 2N3904 TECHNICAL DATA FEATURE NPN silicon epitaxial planar transistor for switching and TO-92 Amplifier applications As complementary type, the PNP transistor 2N3906 is Recommended 1. EMITTER 2. BASE 3. NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Absolute Maximum Ratings* T A = 25°C unless otherwise noted

2N3904 / MMBT3904 / PZT3904. Typical Characteristics. Base-Emitter ON Voltage vs Collector Current. 0.1 1 10 100 0.2 0.4 0.6 0.8 1 V - BASE-EMITTER ON VOLTAGE (V) I - COLLECTOR CURRENT (mA) N) C. V = 5V. CE 25 °C 125 °C - 40 °C. NPN General Purpose Amplifier (continued) Base-Emitter Saturation Voltage vs Collector Current . 0.1 1 10 100 0.4 0.6 0.8 1 Cookie sheet that wont warp

tran 2n3904 npn 60v 200ma gen purp to92 2N3904 results. BJT: 2N3904 2N3904-T18 2N3904A 2N3904C 2N3904CSM 2N3904DCSM 2N3904E 2N3904G 2N3904N 2N3904S (Marking ZC ) 2N3904SC (Marking ZCC ) 2N3904U (Marking ZC ) 2N3904V H2N3904 MOSFET: IGBT: SCR:

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2N3904 / MMBT3904 / PZT3904 2N3904 MMBT3904 PZT3904 NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Sourced from Process 23. Absolute Maximum Ratings* TA = 25°C unless otherwise noted 2N3904 Transistor and Specifications. 2N3904 Datasheet. 2N3904 Circuits. The 2N3904 is common general-purpose low-power NPN transistor used amplifying or switching applications. It is typically used for low-current, medium voltage, and moderate speed purposes.